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vishay tlmb / g / o / p / s / y1100 document number 83173 rev. 1.8, 30-aug-04 vishay semiconductors www.vishay.com 1 18562 e3 pb pb-free ultrabright 0603 led description the new 0603 led series have been designed in the smallest smd package. this innovative 0603 led technology opens the way to ? smaller products of higher performance more design in flexibility enhanced applications the 0603 led is an obvious solution for small-scale, high power products that are expected to work reli- ability in an ardu ous environment. features smallest smd package 0603 with exceptional brightness 1.6 mm x 0.8 mm x 0.6 mm (l x w x h) high reliability lead frame based temperature range - 40 c to + 100 c footprint compatible to 0603 chipled wavelength 470 nm (blue), 570 nm (green), 560 nm (pure green), 587 nm (yellow), 606 nm orange), 633 nm (red) allngap and gan technology viewing angle: extremely wide 160 grouping parameter: luminous intensity, wavelength available in 8 mm tape ir reflow and ttw soldering lead-free device applications backlight keypads navigation systems cellular phone displays displays for industrial control systems automotive features miniaturized color effects traffic displays parts table part color, luminous intensity tlms1100 red, i v = 63 mcd (typ.) tlmo1100 orange, i v = 80 mcd (typ.) tlmy1100 yellow, i v = 80 mcd (typ.) tlmg1100 green, i v = 35 mcd (typ.) tlmp1100 pure green, i v = 15 mcd (typ.) TLMB1100 blue, i v = 5 mcd (typ.)
www.vishay.com 2 document number 83173 rev. 1.8, 30-aug-04 vishay tlmb / g / o / p / s / y1100 vishay semiconductors absolute maximum ratings t amb = 25 c, unless otherwise specified tlms1100 ,tlmo1100 ,tlmy1100 ,tlmg1100, tlmp1100 TLMB1100 optical and electrical characteristics t amb = 25 c, unless otherwise specified red tlms1100 2) in one packing unit i vmax /i vmin 1.6 parameter test condition symbol value unit reverse voltage v r 12 v dc forward current t amb 60 c i f 30 ma surge forward current t p 10 si fsm 0.5 a power dissipation t amb 75 c p v 90 mw junction temperature t j 120 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 40 to + 100 c soldering temperature acc. vishay spec t sd 260 c thermal resistance junction/ ambient mounted on pc board (pad size > 5 mm 2 ) r thja 480 k/w parameter test condition symbol value unit reverse voltage v r 5v dc forward current t amb 60 c i f 15 ma surge forward current t p 10 si fsm 0.1 a power dissipation t amb 60 c p v 68 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 40 to + 100 c soldering temperature acc. vishay spec t sd 260 c thermal resistance junction/ ambient mounted on pc board (pad size > 5 mm 2 ) r thja 480 k/w parameter test condition symbol min ty p. max unit luminous intensity 2) i f = 20 ma i v 32 63 mcd dominant wavelength i f = 20 ma d 627 633 639 nm peak wavelength i f = 20 ma p 645 nm angle of half intensity i f = 20 ma ? 80 deg forward voltage i f = 20 ma v f 2.1 3.0 v reverse voltage i r = 10 av r 6v junction capacitance v r = 0, f = 1 mhz c j 15 pf
vishay tlmb / g / o / p / s / y1100 document number 83173 rev. 1.8, 30-aug-04 vishay semiconductors www.vishay.com 3 orange tlmo1100 2) in one packing unit i vmax /i vmin 1.6 yellow tlmy1100 2) in one packing unit i vmax /i vmin 1.6 green tlmg1100 2) in one packing unit i vmax /i vmin 1.6 parameter test condition symbol min ty p. max unit luminous intensity 2) i f = 20 ma i v 50 80 mcd dominant wavelength i f = 20 ma d 600 606 609 nm peak wavelength i f = 20 ma p 610 nm angle of half intensity i f = 20 ma ? 80 deg forward voltage i f = 20 ma v f 2.1 3 v reverse voltage i r = 10 av r 6v junction capacitance v r = 0, f = 1 mhz c j 15 pf parameter test condition symbol min ty p. max unit luminous intensity 2) i f = 20 ma i v 50 80 mcd dominant wavelength i f = 20 ma d 580 587 595 nm peak wavelength i f = 20 ma p 591 nm angle of half intensity i f = 20 ma ? 80 deg forward voltage i f = 20 ma v f 2.1 3 v reverse voltage i r = 10 av r 6v junction capacitance v r = 0, f = 1 mhz c j 15 pf parameter test condition symbol min ty p. max unit luminous intensity 2) i f = 20 ma i v 12.5 35 mcd dominant wavelength i f = 20 ma d 564 570 575 nm peak wavelength i f = 20 ma p 572 nm angle of half intensity i f = 20 ma ? 80 deg forward voltage i f = 20 ma v f 2.1 3.0 v reverse voltage i r = 10 av r 6v junction capacitance v r = 0, f = 1 mhz c j 15 pf
www.vishay.com 4 document number 83173 rev. 1.8, 30-aug-04 vishay tlmb / g / o / p / s / y1100 vishay semiconductors pure green tlmp1100 2) in one packing unit i vmax /i vmin 1.6 blue TLMB1100 1) in one packing unit i vmax /i vmin 1.6 parameter test condition symbol min ty p. max unit luminous intensity 2) i f = 20 ma i v 6.3 15 mcd dominant wavelength i f = 20 ma d 551 558 566 nm peak wavelength i f = 20 ma p 555 nm angle of half intensity i f = 20 ma ? 80 deg forward voltage i f = 20 ma v f 2.1 3 v reverse voltage i r = 10 av r 6v junction capacitance v r = 0, f = 1 mhz c j 15 pf parameter test condition symbol min ty p. max unit luminous intensity 1) i f = 10 ma i v 2.8 5 mcd dominant wavelength i f = 10 ma d 466 nm peak wavelength i f = 10 ma p 428 nm angle of half intensity i f = 10 ma ? 80 deg forward voltage i f = 20 ma v f 3.9 4.5 v reverse voltage i r = 10 av r 5.0 v
vishay tlmb / g / o / p / s / y1100 document number 83173 rev. 1.8, 30-aug-04 vishay semiconductors www.vishay.com 5 color classification wavelengths are tested at a current pulse dur ation of 25 ms and an accuracy of 1 nm luminous intensity classification group name on label one packing unit/tape contains only one cl assification group of luminous in tensity, color and forward voltage only one single classificati on groups is not available the given groups are not order codes , customer specific group combinat ions require marketing agreement no color subgrouping for super red group dominant wavelength (nm) blue pure green green ye l l o w orange min max min max min max min max min max - 1 551 554 564 565 - 2 460 464 554 557 566 569 580 583 600 603 - 3 464 468 557 560 569 572 583 586 603 606 - 4 468 472 560 563 572 575 586 589 606 609 - 5 472 476 563 566 589 592 609 612 - 6 592 595 group luminous intensity (mcd) min max pa 4 6.3 pb 5 8 qa 6.3 10 qb 8 12.5 ra 10 16 rb 12.5 20 sa 16 25 sb 20 32 ta 25 40 tb 32 50 ua 40 63 ub 50 80 va 63 100 vb 80 125 wa 100 160 wb 125 200 luminous intensity group halfgroup wavelength forward voltage qb 4 1
www.vishay.com 6 document number 83173 rev. 1.8, 30-aug-04 vishay tlmb / g / o / p / s / y1100 vishay semiconductors typical characteristics (t amb = 25 c unless otherwise specified) figure 1. power dissipation vs. ambient temperature figure 2. power dissipation vs. ambient temperature figure 3. change of dominant wavelength vs. ambient temperature 0 10 20 30 40 50 60 70 80 90 100 0 20406080100120 t amb C ambient temperature ( q c ) 19107 p Cpower dissipation (mw) v 0 5 10 15 20 25 30 35 40 0 20406080100120 t amb C ambient temperature ( q c ) 19108 p Cpower dissipation (mw) v ?6 ?4 ?2 0 2 4 6 8 ?200 204060 8 0 100 t a m b ? am b ient temper a t u re ( c ) 1 9 0 8 1 ? ch a nge of dom. w a velength (nm) d or a nge i f = 20 ma figure 4. relative luminous intensity vs. amb. temperature figure 5. forward voltage vs. ambient temperature figure 6. forward current vs. forward voltage 0.0 0.4 0. 8 1.2 1.6 2.0 ?200 204060 8 0 100 t a m b ? am b ient temper a t u re ( c ) 1 9 0 88 i ?rel a tive l u mino us inten s ity vrel or a nge i f = 20 ma 1. 8 0 1. 8 5 1. 9 0 1. 9 5 2.00 2.05 2.10 2.15 2.20 2.25 2. 3 0 2. 3 5 2.40 ?200 204060 8 0 100 t a m b ? am b ient temper a t u re ( c ) 1 9 0 93 v ?forw a rd volt a ge ( v ) f or a nge i f = 20 ma 1.00 10.00 100.00 1.0 1.5 2.0 2.5 3 .0 v f ? forw a rd volt a ge ( v ) 1 9 0 99 i ? forw a rd c u rrent ( ma ) f or a nge
vishay tlmb / g / o / p / s / y1100 document number 83173 rev. 1.8, 30-aug-04 vishay semiconductors www.vishay.com 7 figure 7. relative luminous intensity vs. forward current figure 8. power dissipation vs. ambient temperature figure 9. power dissipation vs. ambient temperature 0.01 0.10 1.00 10.00 1.00 10.00 100.00 i f ? forw a rd c u rrent ( ma ) 1 9 10 9 i ?rel a tive l u mino us inten s ity vrel or a nge 0 10 20 30 40 50 60 70 80 90 100 0 20406080100120 t amb C ambient temperature ( q c ) 19105 p Cpower dissipation (mw) v blue 0 5 10 15 20 0 20406080100120 t amb C ambient temperature ( q c ) 19106 p Cpower dissipation (mw) v blue figure 10. change of dominant wavelength vs. ambient temperature figure 11. relative luminous intensity vs. amb. temperature figure 12. forward voltage vs. ambient temperature ?2 ?1 0 1 2 3 4 ?200 204060 8 0 100 t a m b ? am b ient temper a t u re ( c ) 1 9 0 8 2 ? ch a nge of dom. w a velength (nm) d bl u e i f = 10 ma 0.0 0.4 0. 8 1.2 1.6 2.0 ?200 204060 8 0 100 t a m b ? am b ient temper a t u re ( c ) 1 9 0 9 0 i ?rel a tive l u mino us inten s ity vrel bl u e i f = 10 ma 3 .60 3 .65 3 .70 3 .75 3 . 8 0 3 . 8 5 3 . 9 0 3 . 9 5 4.00 4.05 4.10 4.15 4.20 ?200 204060 8 0 100 t a m b ? am b ient temper a t u re ( c ) 1 9 0 9 4 v ?forw a rd volt a ge ( v ) f bl u e i f = 10 ma
www.vishay.com 8 document number 83173 rev. 1.8, 30-aug-04 vishay tlmb / g / o / p / s / y1100 vishay semiconductors figure 13. forward current vs. forward voltage figure 14. relative luminous intensity vs. forward current figure 15. change of dominant wavelength vs. ambient temperature 1.00 10.00 100.00 2 3 456 v f ? forw a rd volt a ge ( v ) 1 9 100 i ? forw a rd c u rrent ( ma ) f bl u e 0.01 0.10 1.00 10.00 1.00 10.00 100.00 i f ? forw a rd c u rrent ( ma ) 1 9 110 i ?rel a tive l u mino us inten s ity vrel bl u e ?6 ?4 ?2 0 2 4 6 8 10 ?200 204060 8 0 100 t a m b ? am b ient temper a t u re ( c ) 1 9 0 83 ? ch a nge of dom. w a velength (nm) d p u re green i f = 20 ma figure 16. relative luminous intensity vs. amb. temperature figure 17. forward voltage vs. ambient temperature figure 18. forward current vs. forward voltage 0.0 0.4 0. 8 1.2 1.6 2.0 2.4 ?200 204060 8 0 100 t a m b ? am b ient temper a t u re ( c ) 1 9 0 8 7 i ?rel a tive l u mino us inten s ity vrel p u re green i f = 20 ma 1. 8 0 1. 8 5 1. 9 0 1. 9 5 2.00 2.05 2.10 2.15 2.20 2.25 2. 3 0 2. 3 5 2.40 ?200 204060 8 0 100 t a m b ? am b ient temper a t u re ( c ) 1 9 0 9 5 v ?forw a rd volt a ge ( v ) f p u re green i f = 20 ma 1.00 10.00 100.00 1.0 1.5 2.0 2.5 3 .0 v f ? forw a rd volt a ge ( v ) 1 9 101 i ? forw a rd c u rrent ( ma ) f p u re green
vishay tlmb / g / o / p / s / y1100 document number 83173 rev. 1.8, 30-aug-04 vishay semiconductors www.vishay.com 9 figure 19. relative luminous intensity vs. forward current figure 20. change of dominant wavelength vs. ambient temperature figure 21. relative luminous intensity vs. amb. temperature 0.01 0.10 1.00 10.00 1.00 10.00 100.00 i f ? forw a rd c u rrent ( ma ) 1 9 111 i ?rel a tive l u mino us inten s ity vrel p u re green ?6 ?4 ?2 0 2 4 6 8 10 ?200 204060 8 0 100 t a m b ? am b ient temper a t u re ( c ) 1 9 0 8 4 ? ch a nge of dom. w a velength (nm) d green i f = 20 ma 0.0 0.4 0. 8 1.2 1.6 2.0 2.4 ?200 204060 8 0 100 t a m b ? am b ient temper a t u re ( c ) 1 9 0 89 i ?rel a tive l u mino us inten s ity vrel green i f = 20 ma figure 22. forward voltage vs. ambient temperature figure 23. forward current vs. forward voltage figure 24. relative luminous intensity vs. forward current 1. 8 0 1. 8 5 1. 9 0 1. 9 5 2.00 2.05 2.10 2.15 2.20 2.25 2. 3 0 2. 3 5 2.40 ?200 204060 8 0 100 t a m b ? am b ient temper a t u re ( c ) 1 9 0 9 6 v ?forw a rd volt a ge ( v ) f green i f = 20 ma 1.00 10.00 100.00 1.0 1.5 2.0 2.5 3 .0 v f ? forw a rd volt a ge ( v ) 1 9 102 i ? forw a rd c u rrent ( ma ) f green 0.01 0.10 1.00 10.00 1.00 10.00 100.00 i f ? forw a rd c u rrent ( ma ) 1 9 112 i ?rel a tive l u mino us inten s ity vrel green
www.vishay.com 10 document number 83173 rev. 1.8, 30-aug-04 vishay tlmb / g / o / p / s / y1100 vishay semiconductors figure 25. change of dominant wavelength vs. ambient temperature figure 26. relative luminous intensity vs. amb. temperature figure 27. forward voltage vs. ambient temperature ?6 ?4 ?2 0 2 4 6 8 ?200 204060 8 0 100 t a m b ? am b ient temper a t u re ( c ) 1 9 0 8 5 ? ch a nge of dom. w a velength (nm) d yellow i f = 20 ma 0.0 0.4 0. 8 1.2 1.6 2.0 ?200 204060 8 0 100 t a m b ? am b ient temper a t u re ( c ) 1 9 0 9 2 i ?rel a tive l u mino us inten s ity vrel yellow i f = 20 ma 1. 8 0 1. 8 5 1. 9 0 1. 9 5 2.00 2.05 2.10 2.15 2.20 2.25 2. 3 0 2. 3 5 2.40 ?200 204060 8 0 100 t a m b ? am b ient temper a t u re ( c ) 1 9 0 9 7 v ?forw a rd volt a ge ( v ) f yellow i f = 20 ma figure 28. forward current vs. forward voltage figure 29. relative luminous intensity vs. forward current figure 30. change of dominant wavelength vs. ambient temperature 1.00 10.00 100.00 1.0 1.5 2.0 2.5 3 .0 v f ? forw a rd volt a ge ( v ) 1 9 104 i ? forw a rd c u rrent ( ma ) f yellow 0.01 0.10 1.00 10.00 1.00 10.00 100.00 i f ? forw a rd c u rrent ( ma ) 1 9 114 i ?rel a tive l u mino us inten s ity vrel yellow ?4 ? 3 ?2 ?1 0 1 2 3 4 ?200 204060 8 0 100 t a m b ? am b ient temper a t u re ( c ) 1 9 0 8 6 ? ch a nge of dom. w a velength (nm) d red i f = 20 ma
vishay tlmb / g / o / p / s / y1100 document number 83173 rev. 1.8, 30-aug-04 vishay semiconductors www.vishay.com 11 figure 31. relative luminous intensity vs. amb. temperature figure 32. forward voltage vs. ambient temperature figure 33. forward current vs. forward voltage 0.0 0.4 0. 8 1.2 1.6 2.0 ?200 204060 8 0 100 t a m b ? am b ient temper a t u re ( c ) 1 9 0 9 1 i ?rel a tive l u mino us inten s ity vrel red i f = 20 ma 1.60 1.65 1.70 1.75 1. 8 0 1. 8 5 1. 9 0 1. 9 5 2.00 2.05 2.10 2.15 2.20 ?200 204060 8 0 100 t a m b ? am b ient temper a t u re ( c ) 1 9 0 98 v ?forw a rd volt a ge ( v ) f red i f = 20 ma 1.00 10.00 100.00 1.0 1.5 2.0 2.5 3 .0 v f ? forw a rd volt a ge ( v ) 1 9 10 3 i ? forw a rd c u rrent ( ma ) f red figure 34. relative luminous intensity vs. forward current 0.01 0.10 1.00 10.00 1.00 10.00 100.00 i f ? forw a rd c u rrent ( ma ) 1 9 11 3 i ?rel a tive l u mino us inten s ity vrel red
www.vishay.com 12 document number 83173 rev. 1.8, 30-aug-04 vishay tlmb / g / o / p / s / y1100 vishay semiconductors reel dimensions 19043
vishay tlmb / g / o / p / s / y1100 document number 83173 rev. 1.8, 30-aug-04 vishay semiconductors www.vishay.com 13 tape dimensions 19044
www.vishay.com 14 document number 83173 rev. 1.8, 30-aug-04 vishay tlmb / g / o / p / s / y1100 vishay semiconductors package dimensions in mm 18561
vishay tlmb / g / o / p / s / y1100 document number 83173 rev. 1.8, 30-aug-04 vishay semiconductors www.vishay.com 15 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performanc e of our products, processes, distribution and operatingsystems with respect to their impact on the hea lth and safety of our empl oyees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423

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